55GN01CA no. a 1111-1/8 features ? high cutoff frequency : f t =5.5ghz typ ? high gain : ? s21e ? 2 =9.5db typ (f=1ghz) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7013a-009 ordering number : ena1111a 71112 tkim/o2908ab msim tc-00001675 55GN01CA npn epitaxial planar silicon transistor uhf wide-band low-noise ampli er applications http:// semicon.sanyo.com/en/network sanyo semiconductors data sheet product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking electrical connection 1 : base 2 : emitter 3 : collector sanyo : cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 tb zw lot no. lot no. 55GN01CA-tb-e 3 2 1
55GN01CA no. a 1111-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t 1v ce =3v, i c =5ma 3.0 4.5 ghz f t 2v ce =5v, i c =20ma 5.5 ghz output capacitance cob v cb =10v, f=1mhz 1.1 1.3 pf reverse transfer capacitance cre 0.7 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =20ma, f=1ghz 6.5 9.5 db noise figure nf v ce =3v, i c =5ma, f=1ghz, z s =z l =50 1.9 db ordering information device package shipping memo 55GN01CA-tb-e cp 3,000pcs./reel pb free 012345678910 0 5 10 15 20 25 30 35 40 45 50 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it06252 i b =0ma 0.30ma 0.25ma 0.20ma 0.15ma 0.10ma 0.05ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0 80 70 60 50 40 30 20 10 base-to-emitter voltage, v be -- v collector current, i c -- ma it06253 i c -- v be v ce =5v h fe -- i c collector current, i c -- ma dc current gain, h fe it06254 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it07156 100 2 7 5 3 1.0 357 2357 10 23 57 100 v ce =5v 1.0 10 7 5 3 2 1.0 23 57 23 57 10 100 v ce =5v
55GN01CA no. a 1111-3/8 collector current, i c -- ma ? s21e ? 2 -- i c forward transfer gain, ? s21e ? 2 -- db it07157 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it05672 0.1 23 57 1.0 23 23 55 7 10 5 7 2 5 3 1.0 f=1mhz cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it05673 3 7 5 5 3 1.0 2 it05673 0.1 23 57 1.0 23 23 57 10 f=1mhz 1.0 1.5 3.0 2.0 2.5 1.0 23 57 10 nf -- i c collector current, i c -- ma noise figure, nf -- db it05674 v ce =3v f=1ghz z s =z l =50 it07159 collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c collector current, i c -- ma ? s21e ? 2 -- i c forward transfer gain, ? s21e ? 2 -- db it07158 1.0 23 7 5 100 23 5 7 10 6 8 10 14 18 16 12 v ce =5v f=400mhz 1.0 23 7 5 100 23 5 7 10 2 3 5 4 7 8 10 9 6 v ce =5v f=1ghz 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 240
55GN01CA no. a 1111-4/8 s parameters (common emitter) v ce =5v, i c =1ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.949 -22.44 3.333 161.77 0.051 76.83 0.974 -10.27 200 0.896 -42.53 3.106 145.66 0.096 64.91 0.926 -19.70 400 0.771 -76.67 2.521 119.93 0.149 47.18 0.801 -32.90 600 0.679 -102.20 2.043 101.07 0.167 38.13 0.714 -40.64 800 0.622 -122.03 1.712 86.82 0.169 34.45 0.661 -46.50 1000 0.585 -138.21 1.490 75.34 0.164 35.98 0.642 -51.94 1200 0.566 -152.02 1.321 65.79 0.158 41.97 0.633 -56.73 1400 0.555 -163.57 1.192 57.95 0.167 51.00 0.636 -62.43 1600 0.550 -173.92 1.101 51.64 0.189 57.12 0.653 -68.80 1800 0.545 176.42 1.027 45.83 0.209 64.08 0.665 -74.79 2000 0.543 167.94 0.963 41.62 0.262 70.03 0.683 -80.37 v ce =5v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.849 -36.58 8.604 151.45 0.047 69.52 0.908 -19.05 200 0.719 -65.72 7.078 130.50 0.077 58.46 0.768 -32.07 400 0.543 -104.50 4.701 105.14 0.109 49.29 0.576 -42.71 600 0.466 -128.63 3.425 90.40 0.126 50.26 0.500 -47.19 800 0.434 -145.01 2.697 79.88 0.141 53.53 0.463 -51.04 1000 0.417 -157.80 2.265 71.34 0.162 57.40 0.455 -55.89 1200 0.414 -167.96 1.951 63.80 0.183 60.44 0.454 -60.20 1400 0.415 -176.38 1.735 57.35 0.214 63.33 0.460 -65.55 1600 0.418 175.97 1.591 51.56 0.245 61.95 0.473 -71.92 1800 0.421 169.02 1.462 45.89 0.266 63.26 0.487 -77.11 2000 0.426 163.03 1.370 41.27 0.313 65.05 0.508 -81.84 v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.765 -46.98 12.335 143.95 0.044 67.33 0.845 -24.79 200 0.598 -80.18 9.191 121.62 0.066 56.98 0.662 -37.77 400 0.442 -118.84 5.505 99.01 0.093 54.34 0.476 -45.43 600 0.392 -140.14 3.887 86.64 0.118 58.30 0.418 -48.57 800 0.374 -154.61 3.029 77.50 0.143 61.09 0.392 -52.48 1000 0.367 -165.56 2.520 70.15 0.169 63.39 0.389 -57.19 1200 0.367 -174.16 2.162 63.07 0.197 64.83 0.391 -61.75 1400 0.373 179.13 1.916 57.27 0.232 65.23 0.398 -67.63 1600 0.378 172.36 1.749 51.58 0.263 62.63 0.412 -74.04 1800 0.384 166.49 1.606 46.28 0.284 62.94 0.424 -79.34 2000 0.391 161.65 1.501 41.77 0.331 63.69 0.445 -83.92 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.604 -65.10 17.802 131.98 0.037 62.29 0.725 -33.04 200 0.444 -100.60 11.395 111.07 0.056 60.51 0.514 -43.72 400 0.347 -135.89 6.264 92.91 0.085 63.77 0.367 -46.89 600 0.325 -153.23 4.335 82.90 0.117 66.77 0.332 -49.51 800 0.319 -164.36 3.342 75.17 0.148 67.58 0.321 -54.09 1000 0.321 -173.02 2.760 68.51 0.181 67.37 0.321 -59.12 1200 0.326 -179.73 2.364 62.39 0.211 67.45 0.327 -64.26 1400 0.336 174.71 2.089 57.19 0.249 66.65 0.337 -70.42 1600 0.343 169.12 1.904 51.75 0.280 62.79 0.350 -77.67 1800 0.349 164.16 1.741 46.76 0.300 62.41 0.361 -82.73 2000 0.358 160.18 1.629 42.30 0.347 62.24 0.382 -87.25
55GN01CA no. a 1111-5/8 s parameters (common emitter) v ce =5v, i c =15ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.511 -75.82 20.333 125.66 0.034 62.58 0.649 -37.05 200 0.379 -111.32 12.202 106.68 0.051 63.43 0.445 -45.58 400 0.315 -144.06 6.538 90.52 0.084 68.22 0.326 -47.13 600 0.302 -158.98 4.489 81.46 0.118 69.82 0.299 -49.32 800 0.301 -168.64 3.455 74.33 0.153 69.70 0.290 -54.83 1000 0.307 -176.32 2.857 67.93 0.186 68.77 0.296 -60.27 1200 0.314 177.94 2.433 62.00 0.217 68.37 0.302 -65.94 1400 0.322 172.88 2.153 57.01 0.256 66.71 0.311 -71.94 1600 0.329 167.84 1.961 51.67 0.286 62.74 0.325 -79.69 1800 0.337 163.07 1.792 46.79 0.308 61.86 0.337 -84.37 2000 0.348 159.32 1.676 42.28 0.355 61.87 0.359 -88.78 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.461 -82.96 21.657 121.91 0.031 64.47 0.600 -39.22 200 0.346 -118.63 12.582 104.09 0.049 64.74 0.406 -46.06 400 0.299 -149.09 6.669 89.15 0.084 70.72 0.302 -46.24 600 0.293 -162.67 4.554 80.67 0.118 71.64 0.283 -49.39 800 0.295 -171.32 3.503 73.57 0.153 70.77 0.275 -54.70 1000 0.299 -178.25 2.900 67.59 0.187 69.56 0.282 -60.94 1200 0.307 176.25 2.468 61.65 0.221 68.70 0.290 -66.45 1400 0.316 172.08 2.178 56.76 0.260 66.77 0.300 -72.89 1600 0.325 166.77 1.988 51.53 0.290 62.70 0.316 -80.43 1800 0.333 162.69 1.813 46.81 0.310 62.12 0.325 -85.59 2000 0.343 158.91 1.692 42.30 0.357 61.46 0.347 -89.65 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.399 -93.89 22.859 117.43 0.029 65.09 0.537 -40.85 200 0.317 -127.93 12.830 101.25 0.045 68.93 0.364 -45.35 400 0.289 -154.90 6.712 87.64 0.082 71.95 0.281 -44.97 600 0.288 -166.40 4.587 79.56 0.119 72.93 0.266 -48.17 800 0.293 -174.03 3.524 72.71 0.155 72.01 0.262 -54.35 1000 0.298 179.55 2.904 66.80 0.190 70.26 0.269 -60.45 1200 0.306 174.88 2.478 61.04 0.223 69.29 0.279 -66.19 1400 0.318 170.70 2.188 56.20 0.261 66.98 0.289 -73.12 1600 0.327 165.85 1.992 50.94 0.292 63.01 0.305 -80.46 1800 0.336 161.66 1.815 46.08 0.313 62.10 0.318 -85.63 2000 0.347 158.15 1.699 41.95 0.358 61.22 0.337 -90.00 v ce =5v, i c =50ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.362 -108.51 22.521 112.91 0.026 65.35 0.481 -39.63 200 0.317 -140.52 12.288 98.38 0.044 72.35 0.338 -40.74 400 0.307 -162.72 6.363 85.74 0.080 73.69 0.278 -40.44 600 0.310 -172.48 4.352 77.92 0.119 74.51 0.271 -44.11 800 0.316 -178.74 3.340 71.23 0.153 72.84 0.270 -50.45 1000 0.324 175.82 2.762 65.12 0.189 71.55 0.280 -57.21 1200 0.333 171.21 2.353 59.35 0.220 70.16 0.289 -63.53 1400 0.345 167.33 2.077 54.36 0.260 68.28 0.300 -70.35 1600 0.354 162.55 1.888 49.16 0.289 63.88 0.317 -78.50 1800 0.363 158.67 1.725 44.33 0.313 63.21 0.330 -83.35 2000 0.376 155.01 1.615 39.70 0.361 62.47 0.352 -88.07
55GN01CA no. a 1111-6/8 embossed taping speci cation 55GN01CA-tb-e
55GN01CA no. a 1111-7/8 outline drawing land pattern example 55GN01CA-tb-e mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
55GN01CA no. a 1111-8/8 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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